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Stranski – Krastanov: Definitions and Process Essay


SK involves layers formed against each other. The growth is characterised by spontaneous nucleation and development of islands.1 SK is one of the 3 processes involved in the formation of thin films. The other 2 are Frank-van der Merwe and Volmer- weber growth.2

The SK process involves growing epitaxial at the interface. Two processes are involved. The two are:

Adsorption

It involves atoms and ions usually released from gas and stuck on a surface, a feature known as the adsorbate. The surface on which the process is taking place is referred to as adsorbent.3 During the adsorption process, layers are created, forming several monometers and giving a crystal clear substrate.

Nucleation

It is whereby the SK bonds are localised at a specific point. Most of the nucleation process is physical, but few areas are chemical. An example of a chemical process includes electrochemical nucleation. Nucleation leads to the creation of crystalline amorphous in different states of matter, ranging from gas to liquid.4

Bibliography

Oura, K, Surface science: an introduction, Springer, Berlin, 2012.

Sze, S, Physics of semiconductor devices, John Wiley and Sons, New York, 2012.

Footnotes

  1. K Oura, Surface science: an introduction, Springer, Berlin, 2012, p. 31.
  2. Oura, p. 32.
  3. Sze, p. 37.
  4. Sze, p. 36.
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"Stranski – Krastanov: Definitions and Process." IvyPanda, 12 Jan. 2021, ivypanda.com/essays/stranski-krastanov-definitions-and-process/.

1. IvyPanda. "Stranski – Krastanov: Definitions and Process." January 12, 2021. https://ivypanda.com/essays/stranski-krastanov-definitions-and-process/.


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IvyPanda. "Stranski – Krastanov: Definitions and Process." January 12, 2021. https://ivypanda.com/essays/stranski-krastanov-definitions-and-process/.

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IvyPanda. 2021. "Stranski – Krastanov: Definitions and Process." January 12, 2021. https://ivypanda.com/essays/stranski-krastanov-definitions-and-process/.

References

IvyPanda. (2021) 'Stranski – Krastanov: Definitions and Process'. 12 January.

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